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Hyper-fast recovery epitaxial diode

Hyper-fast recovery epitaxial diode

FRED is a high-performance fast diode prepared by epitaxial wafers and the ion implantation process with faster switching speed, smaller recovery charge Qrr and reverse recovery current IRRM, more accurate parameters, less switching loss, and better softness. It is often used as a follow current, absorption, clamping, isolation, and output and input rectifier for the switching components of high-frequency inverter components to maximize the capabilities of the switching components. The hyper-fast recovery epitaxial diode has a reverse recovery time of 25 ns.
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