Highlights of JieJie Mircoelectronics at the 2020 (Winter) USB PD & Type-C Asia Exhibition
Date:2020.12.24 Visit:247

 

 

On December 18, 2020, the 2020 (Winter) USB PD&Type-C Asia Exhibition was successfully held at the Science and Technology Park in Nanshan District, Shenzhen. This exhibition is open to the world, with exhibitors scattered around the world, bringing together hundreds of high-quality suppliers and service providers in the industry chain, as well as thousands of buyers.
Jiejie Microelectronics (booth number: G09) debuted with the latest low conduction resistance SGT MOSFET and AC/DC new production lines. There are many customers who come to the booth for consultation and negotiation.
Exhibition Highlights
Exhibition Site Map

 

 

 

 

Jiejie Microelectronics Exhibition Stand

 

 

 

 

Jiejie Exhibition Samples

 

 

 

 

Jiejie SGT MOSFET
Since its establishment, Jiejie Microelectronics (Shanghai) has launched many technologically advanced and self owned JSFETs ® Technical platform, SGT MOSFETs with a voltage range of 30-150V. JSFET technology combines the R&D design and market elite team of Jiejie Microelectronics (Shanghai) with an international background, with years of experience and wisdom in semiconductor core fields and sales such as device design, manufacturing process, packaging, packaging, manufacturing, reliability, and terminal applications. Each product provided has industry-leading electrical characteristics such as low conduction impedance and junction capacitance/load. In addition to its own advanced chip design and packaging technology, Jiejie Microelectronics will continuously improve product efficiency, aiming to be world-class and meet the growing demand for market applications such as wired and wireless fast charging.
In response to fast charging chargers, Jiejie Microelectronics can provide the required integrated ICs and power devices, such as MOVs, TVS, rectifier tubes, high-voltage MOSFETs, primary PWM ICs, secondary synchronous control ICs, fast charging protocol ICs, ESD, etc. Whether it is the use of traditional ultra junction high-voltage MOSFETs in the primary stage, or the increasingly popular gallium nitride HEMT by circuit design engineers, in the secondary stage of topology, the SGT MOSFETs of the advanced JSFET technology platform of JEJEJET Microelectronics have indispensable functions in synchronous rectification and current output switches at USB-C ports.
Product recommendations
For chargers compatible with fast charging protocols such as USB PD, Huawei FCP, MTK PE+, Qualcomm QC, etc., in the secondary synchronous rectifier switch circuit, Jiejie Microelectronics provides 60~150VDS from the following list_ Max SGT N-MOSFETs are selected by circuit design engineers.

 

 

 

 

In the switch circuit before the USB-C output interface, Jiejie Microelectronics provides the 30~40VDS listed below_ Max SGT N-MOSFETs are selected by circuit design engineers.

 

 

 

 

For applications such as AC/DC and DC/DC power conversion, wireless fast charging compatible with Qi electromagnetic induction or WPT electromagnetic resonance protocol, motor drive, mini LED backlight drive, battery protection and management, Jiejie Microelectronics provides 30-150VDS from the following list_ Max SGT N-MOSFETs are selected by circuit design engineers.

 

 

 

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